IRLR3714Z International Rectifier, IRLR3714Z Datasheet - Page 3
IRLR3714Z
Manufacturer Part Number
IRLR3714Z
Description
MOSFET N-CH 20V 37A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR3714ZTR.pdf
(12 pages)
Specifications of IRLR3714Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
7.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
35W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3714Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR3714Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRLR3714ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRLR3714ZPBF
Manufacturer:
STM
Quantity:
6 928
www.irf.com
1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
1
0.1
2.0
0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
1
1
3.0V
6.0
60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
V DS = 10V
60µs PULSE WIDTH
10
10
T J = 175°C
8.0
V
100
100
10.0
2.0
1.5
1.0
0.5
1000
100
10
-60 -40 -20
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
0.1
0
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
V
0
20
1
1
3.0V
40
60µs PULSE WIDTH
Tj = 175°C
60
80 100 120 140 160
10
10
3
100
100