IRL1404ZS International Rectifier, IRL1404ZS Datasheet

MOSFET N-CH 40V 75A D2PAK

IRL1404ZS

Manufacturer Part Number
IRL1404ZS
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1404ZS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1404ZS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL1404ZS
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL1404ZS
Manufacturer:
Infineon Technologies
Quantity:
65 170
Part Number:
IRL1404ZSPBF
Manufacturer:
Infineon Technologies
Quantity:
7 276
Part Number:
IRL1404ZSTRL
Manufacturer:
Infineon Technologies
Quantity:
156
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
Infineon Technologies
Quantity:
1 348
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
IR
Quantity:
135
Features
l
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Ã
i
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
TO-220AB
IRL1404Z
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
D
S
IRL1404ZS
-55 to + 175
D
y
Max.
in (1.1N
2
200
140
790
230
± 16
220
490
1.5
75
Pak
®
R
IRL1404ZS
IRL1404ZL
Power MOSFET
DS(on)
V
y
IRL1404Z
m)
Max.
DSS
0.65
I
–––
D
62
40
= 75A
PD - 94804B
IRL1404ZL
= 3.1mΩ
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRL1404ZS

IRL1404ZS Summary of contents

Page 1

... PD - 94804B IRL1404Z IRL1404ZS IRL1404ZL ® HEXFET Power MOSFET 40V DSS R = 3.1mΩ DS(on 75A Pak TO-262 IRL1404ZS IRL1404ZL Max. Units 200 140 A 75 790 230 W 1.5 W/°C ± 220 mJ 490 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° 10V 60µs ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 150 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 0. 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 250 TOP Single Pulse BOTTOM 1% Duty Cycle 75A 200 150 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING ...

Page 10

Dimensions are shown in millimeters (inches www.irf.com ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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