IRL1404ZS International Rectifier, IRL1404ZS Datasheet - Page 2

• Manufacturer Part Number: IRL1404ZS
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1404ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL1404ZS

V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Notes:

‚
ƒ
„
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
(BR)DSS
L = 0.079mH, R
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
charging time as C
80% V
max. junction temperature. (See fig. 11).
Limited by T
oss
eff.
eff. is a fixed capacitance that gives the same
/∆T
DSS
J
.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Jmax
G
, starting T
= 25Ω, I
Parameter
oss
while V
AS
Parameter
J
= 75A, V
™
= 25°C,
DS
is rising from 0 to
J
GS
= 25°C (unless otherwise specified)
=10V.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
40
Limited by T
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
0.034
5080
3310
1280
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
970
570
870
–––
–––
–––
2.5
4.5
7.5
75
28
40
19
30
49
26
18
Jmax
-200
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
720
3.1
4.7
5.9
2.7
1.3
20
39
27
, see Fig.12a, 12b, 15, 16 for typical
V/°C
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 4.0Ω
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 10V, I
= 40V, V
= 40V, V
= 16V
= -16V
= 32V
= 5.0V
= 20V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
e
e
D
DS
S
F
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 40A
= 40A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
e
D
e
e
G
= 1mA
DD
GS
J
= 125°C
= 20V
G
= 0V
f
D
S
e
S
D