IRF7453TRPBF International Rectifier, IRF7453TRPBF Datasheet

MOSFET N-CH 250V 2.2A 8-SOIC

IRF7453TRPBF

Manufacturer Part Number
IRF7453TRPBF
Description
MOSFET N-CH 250V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7453TRPBF.pdf (8 pages)

Specifications of IRF7453TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7453PBFTR
IRF7453TRPBF
IRF7453TRPBFTR
Thermal Resistance
l
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through † are on page 8
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Lead-Free
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
Parameter
Parameter
„
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
250V
1
2
3
4
DSS
Top View
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
0.23
8
7
6
5
-55 to + 150
R
Max.
0.02
W
DS(on)
± 30
2.2
1.7
2.5
D
D
D
17
13
D
A
A
@V
IRF7453PbF
®
GS
Power MOSFET
max
Max.
= 10V
20
50
SO-8
2.2A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
10/12/04

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IRF7453TRPBF Summary of contents

Page 1

Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate to Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and ...

Page 2

IRF7453PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF7453PbF 10000 0V MHZ C iss = rss = oss = Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE (THERMAL ...

Page 6

IRF7453PbF 0.26 0.24 0. 10V 0.20 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µ ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 8

IRF7453PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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