STN2NE10 STMicroelectronics, STN2NE10 Datasheet

MOSFET N-CH 100V 2A SOT-223

STN2NE10

Manufacturer Part Number
STN2NE10
Description
MOSFET N-CH 100V 2A SOT-223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN2NE10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
305pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN2NE10
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
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STN2NE10
Manufacturer:
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Quantity:
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Part Number:
STN2NE10
Manufacturer:
ST
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Part Number:
STN2NE10 N2NE10 SOT223
Manufacturer:
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Part Number:
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Part Number:
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DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
Size
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
January 1999
STN2NE10
Symbol
dv/dt(
I
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
V
DM
New RDS (on) spec. starting from JULY 98
V
V
P
T
DGR
I
I
T
GS
st g
DS
D
D
tot
TYPE
( )
j
" stip-based process. The resulting transi-
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
100 V
V
= 0.33
DSS
unique
N - CHANNEL 100V - 0.33
Parameter
< 0.4
R
DS(on)
c
"Single
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
Feature
2 A
= 25
= 100
I
D
o
STripFET
C
o
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
7 A, di/dt
200 A/ s, V
2
POWER MOSFET
-65 to 150
Value
SOT-223
0.02
100
100
150
1.3
2.5
8
6
2
20
- 2A - SOT-223
DD
STN2NE10
1
V
(BR)DSS
2
PRELIMINARY DATA
3
, T
j
T
JMAX
W/
Unit
V/ns
o
o
W
V
V
V
A
A
A
C
C
o
C
1/5

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STN2NE10 Summary of contents

Page 1

... Max. Operating Junction Temperature Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 January 1999 STripFET I DS(on "Single Feature INTERNAL SCHEMATIC DIAGRAM = 100 di/ STN2NE10 - 2A - SOT-223 POWER MOSFET PRELIMINARY DATA SOT-223 Value Unit 100 V 100 1 2 V/ns o -65 to 150 C o 150 ...

Page 2

... STN2NE10 THERMAL DATA R Thermal Resistance Junction-PC Board thj-pcb R Thermal Resistance Junction-ambient thj-amb (Surface Mounted) T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter ...

Page 3

... Load, see fig Test Conditions VDD = 3 =4 (Resistive Load, see fig clamp 4 (Inductive Load, see fig. 5) Test Conditions di/dt = 100 (see test circuit, fig. 5) STN2NE10 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 1 210 C 5.5 A 3/5 ...

Page 4

... STN2NE10 DIM. MIN. a 2.27 b 4.57 c 0.2 d 0. 2.9 g 0.67 l1 6.7 l2 3.5 L 6.3 B 4/5 SOT-223 MECHANICAL DATA mm TYP. MAX. 2.3 2.33 4.6 4.63 0.4 0.6 0.65 0.67 1.6 1.7 0.32 3 3.1 0.7 0.73 7 7.3 3.5 3.7 6.5 6 mils MIN. TYP. MAX. ...

Page 5

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com . STN2NE10 5/5 ...

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