STB12NM50FDT4 STMicroelectronics, STB12NM50FDT4 Datasheet - Page 5

• Manufacturer Part Number: STB12NM50FDT4
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB12NM50FDT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5380-2; STB12NM50FDT4

STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
t
SDM
r(Voff)
I
I
d(on)
RRM
RRM
I
SD
Q
Q
t
t
t
SD
t
t
c
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 17)
V
R
(see Figure 17)
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
DD
DD
G
G
SD
SD
SD
DD
DD
=4.7Ω, V
=4.7Ω, V
=12A, V
=12A, Tj=25°C
=12A, Tj=150°C
=250 V, I
=400 V, I
Test Condictions
Test condictions
=30V,
=30V,
(see Figure 22)
(see Figure 22)
GS
GS
GS
D
D
= 6A,
= 12A,
=0
=10V
=10V
Electrical characteristics
Min.
Min
1890
Typ.
Typ.
140
800
252
19
10
39
18
29
11
15
Max. Unit
Max Unit
1.5
12
48
ns
ns
ns
ns
ns
nC
nC
ns
ns
5/18
A
A
V
A
A