IRFR12N25DCTRRP International Rectifier, IRFR12N25DCTRRP Datasheet

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IRFR12N25DCTRRP

Manufacturer Part Number
IRFR12N25DCTRRP
Description
MOSFET N-CH 250V 14A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR12N25DCTRRP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
810pF @ 25V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through … are on page 10
I
I
I
P
V
dv/dt
T
T
Benefits
R
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JC
JA
JA
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
to Simplify Design, (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
250V
DSS
300 (1.6mm from case )
Typ.
–––
–––
–––
HEXFET
-55 to + 175
IRFR12N25D
R
Max.
0.96
± 30
144
D-Pak
9.7
9.3
DS(on)
14
56
0.26
®
Power MOSFET
IRFR12N25D
IRFU12N25D
Max.
1.04
max
110
50
IRFU12N25D
PD - 94296A
I-Pak
Units
Units
W/°C
°C/W
V/ns
14A
°C
W
I
A
V
D
1
09/21/01

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IRFR12N25DCTRRP Summary of contents

Page 1

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design, (See OSS App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings ...

Page 2

IRFR12N25D/IRFU12N25D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 10 7.0V 6.0V 5.5V BOTTOM 5.0V 1 0.1 5.0V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.00 10.00 1.00 ...

Page 4

IRFR12N25D/IRFU12N25D 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss Crss 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05  0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

Page 6

IRFR12N25D/IRFU12N25D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET ...

Page 8

IRFR12N25D/IRFU12N25D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRFR12N25D/IRFU12N25D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G ...

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