2SK2313 Toshiba, 2SK2313 Datasheet - Page 2

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2SK2313

Manufacturer Part Number
2SK2313
Description
MOSFET N-CH 60V 60A 2-16C1B
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2313

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 10V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2313
Manufacturer:
TOS
Quantity:
5 000
Part Number:
2SK2313
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Part Number:
2SK2313
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
K2313
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
C
I
I
|Y
C
C
Q
Q
GSS
DRP
DSS
V
I
t
t
Q
Q
DSF
DR
t
on
off
oss
t
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DR
= 10 mA, V
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
= 60 A, V
= 60 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
≈ 48 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
/ dt = 50 A / μs
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
D
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
= 30 A
GS
GS
Test Condition
Test Condition
= 1 mA
= 30 A
DS
= 30 A
= 0 V
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V, f = 1 MHz
= 0 V
D
= 60 A
Min
Min
0.8
60
40
5400
2600
Typ.
Typ.
920
220
170
110
150
0.3
12
60
30
60
65
60
8
2009-09-29
2SK2313
Max
−1.7
Max
±10
100
240
2.0
15
11
60
Unit
Unit
mΩ
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V

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