2SK2916 Toshiba, 2SK2916 Datasheet

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2SK2916

Manufacturer Part Number
2SK2916
Description
MOSFET N-CH 500V 14A 2-16F1B
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2916

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 10V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
2-16F1B
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2916
Manufacturer:
TOSHIBA
Quantity:
4 795
Part Number:
2SK2916
Manufacturer:
FUJITSU
Quantity:
12 500
DC−DC Converter, Relay Drive and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain–source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain–source voltage
Drain–gate voltage (R
Gate–source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
= 90 V, starting T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)
GS
DC
Pulse (Note 1)
= 20 kΩ)
: I
: V
DSS
th
(Note 1)
(Note 2)
= 2.0 to 4.0 V (V
= 100 μA (max) (V
ch
= 25°C, L = 6.9 mH, R
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
R
R
I
DP
AR
stg
AS
AR
D
ch
Symbol
D
DS (ON)
th (ch–c)
th (ch–a)
2SK2916
fs
| = 11 S (typ.)
DS
= 10 V, I
DS
= 0.35 Ω (typ.)
= 500 V)
−55~150
Rating
500
500
±30
795
150
14
56
80
14
8
1.56
41.6
1
Max
G
D
= 25 Ω, I
= 1 mA)
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 14 A
Weight: 5.8 g (typ.)
JEDEC
JEITA
TOSHIBA
2-16F1B
2009-09-29
2SK2916
Unit: mm

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2SK2916 Summary of contents

Page 1

... Symbol Rating Unit V 500 V DSS V 500 V DGR V ±30 V GSS 795 150 ° −55~150 °C stg Symbol Max Unit R 1.56 ° (ch–c) R 41.6 ° (ch–a) = 25° 6.9 mH Ω 2SK2916 JEDEC — JEITA — TOSHIBA 2-16F1B Weight: 5.8 g (typ 2009-09-29 Unit: mm ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2916 Min Typ. Max — — ...

Page 3

... 3 2SK2916 2009-09-29 ...

Page 4

... 4 2SK2916 2009-09-29 ...

Page 5

... Ω 6 2SK2916 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD 2009-09-29 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2916 2009-09-29 ...

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