2SK2993(TE24L) Toshiba, 2SK2993(TE24L) Datasheet

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2SK2993(TE24L)

Manufacturer Part Number
2SK2993(TE24L)
Description
MOSFET N-CH 250V 20A TO-220FL
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2993(TE24L)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 10V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220FL
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
temperature.
DD
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
: I
: V
DSS
= 25°C (initial), L = 1.79 mH, I
th
(Note 1)
(Note 2)
= 1.5 to 3.5 V (V
= 100 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
R
R
stg
AS
AR
D
ch
Symbol
D
DS (ON)
2SK2993
th (ch−a)
fs
th (ch−c)
| = 20 S (typ.)
DS
= 10 V, I
DS
= 82 mΩ (typ.)
−55 to 150
= 250 V)
Rating
250
250
±20
100
423
150
AR
20
60
20
10
1
1.25
83.3
Max
D
= 20 A, R
= 1 mA)
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
G
W
V
V
V
A
A
= 25 Ω
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-10S1B
2-10S2B
2009-09-29
2SK2993
Unit: mm

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2SK2993(TE24L) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : V = 1 Absolute Maximum Ratings Characteristics Drain− ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2993 2009-09-29 ...

Page 4

4 2SK2993 2009-09-29 ...

Page 5

Ω 1. 2SK2993 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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