2SK3568 Toshiba, 2SK3568 Datasheet - Page 4

• Manufacturer Part Number: 2SK3568
• Description: MOSFET N-CH 500V 12A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3568

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
100
2.5
2.0
1.5
1.0
0.5
10
50
40
30
20
10
−80
1
0
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
V GS = 10 V
40
CAPACITANCE – V
0
1
R
DS (ON)
P
D
40
80
– Tc
– Tc
80
10
DS
6
120
DS
120
I D = 12A
C oss
C rss
C iss
(V)
3
160
160
100
4
500
400
300
100
100
200
0.1
10
−80
0
1
5
4
3
2
1
0
0
0
V DS
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
10
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
−0.2
−40
10
DYNAMIC INPUT / OUTPUT
5
V GS
CHARACTERISTICS
V DD = 100 V
−0.4
20
0
3
I
DR
V
1
th
−0.6
– V
40
30
– Tc
DS
200
V GS = 0, −1 V
−0.8
40
80
Common source
I D = 12 A
Tc = 25°C
Pulse test
g
400
DS
(nC)
120
2009-09-29
−1.0
50
2SK3568
(V)
−1.2
160
60
20
8
16
12
4
0