BSS84P-E6327 Infineon Technologies, BSS84P-E6327 Datasheet - Page 3

• Manufacturer Part Number: BSS84P-E6327
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84P; BSS84PE6327XT; BSS84PINTR; BSS84PXTINTR; BSS84PXTINTR; SP000012321

Electrical Characteristics, at
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Rev 2.4
T A
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
= 25 °C, unless otherwise specified
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=-0.14A
=-0.14A, R
=25°C
=-30V, I
/dt=100A/µs
=0, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0, I
2*I
Conditions
D
F
*R
DS
=-0.17A
F =
DS(on)max
D
D
D
=-25V,
G
GS
l
=-0.17A
=-0.17A,
=-0.17A
S
=25
,
=-4.5V,
W
,
0.065
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-3.42
-0.93
0.13
16.2
20.5
0.25
typ.
6.7
8.6
0.3
15
23
10
6
2
1
-
-
2006-12-05
max.
-0.17 A
-0.68
-1.24 V
BSS 84 P
24.3
12.9
30.8
0.37
0.45
1.5
19
10
34
15
8
3
-
-
Unit
S
pF
ns
nC
V
ns
nC