SPA11N60C3 Infineon Technologies, SPA11N60C3 Datasheet - Page 3
![MOSFET N-CH 650V 11A TO220FP](/photos/5/53/55314/448-to-220_fullpak_sml.jpg)
SPA11N60C3
Manufacturer Part Number
SPA11N60C3
Description
MOSFET N-CH 650V 11A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPI11N60C3.pdf
(16 pages)
Specifications of SPA11N60C3
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
5 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013664
SP000216312
SPA11N60C3IN
SPA11N60C3X
SPA11N60C3XTIN
SPA11N60C3XTIN
SP000216312
SPA11N60C3IN
SPA11N60C3X
SPA11N60C3XTIN
SPA11N60C3XTIN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPA11N60C3
Manufacturer:
INFINEON
Quantity:
5 000
Company:
Part Number:
SPA11N60C3
Manufacturer:
INF
Quantity:
5 510
Company:
Part Number:
SPA11N60C3
Manufacturer:
FSC
Quantity:
5 000
Part Number:
SPA11N60C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
SPA11N60C3XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev.
Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
3 .2
5)
6)
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
I
V
f=1MHz
V
V
V
I
R
V
V
V
V
D
D
DS
GS
GS
DS
DD
G
DD
DD
GS
DD
=7A
=11A,
=6.8Ω
≥2*I
=0V to 480V
=0V, V
=0V,
=380V, V
=480V, I
=480V, I
=0 to 10V
=480V, I
Page 3
Conditions
D
*R
DS
DS(on)max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
390
8.3
5.5
5.5
30
45
85
10
44
22
45
*f.
5
5
SPP11N60C3
2009-11-27
max.
70
60
9
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
V
DSS
DSS
.
.