SPD30P06P Infineon Technologies, SPD30P06P Datasheet - Page 3

MOSFET P-CH 60V 30A DPAK

SPD30P06P

Manufacturer Part Number
SPD30P06P
Description
MOSFET P-CH 60V 30A DPAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPD30P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 1.7mA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012842
SP000077529
SPD30P06PINTR
SPD30P06PT
SPD30P06PXTINTR
SPD30P06PXTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD30P06P G
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
SPD30P06P G
Quantity:
8 000
Part Number:
SPD30P06PG
Manufacturer:
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Part Number:
SPD30P06PG
0
Part Number:
SPD30P06PGBTMA1
Manufacturer:
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Quantity:
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Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Rev 2.0
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 1.6
= 1.6
= 1.6
= 1.6
³
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= -30 V, V
= -30 V, V
= -30 V, V
2* I
D
* R
W
W
W
W
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -10 V, I
= -10 V, I
= -10 V, I
= -10 V, I
, I
D
= -21.5 A
D
D
D
D
= -21.5 A,
= -21.5 A,
= -21.5 A,
= -21.5 A,
j
= 25 °C, unless otherwise specified
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
5.2
-
-
-
-
-
-
-
Values
1228
typ.
10.4
387
142
13
11
30
20
SPD30P06P
SPU30P06P
max.
1535
19.5
16.5
383
177
45
30
2008-02-18
-
Unit
S
pF
ns

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