SPD30P06P Infineon Technologies, SPD30P06P Datasheet - Page 7

MOSFET P-CH 60V 30A DPAK

SPD30P06P

Manufacturer Part Number
SPD30P06P
Description
MOSFET P-CH 60V 30A DPAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPD30P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 1.7mA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012842
SP000077529
SPD30P06PINTR
SPD30P06PT
SPD30P06PXTINTR
SPD30P06PXTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD30P06P G
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
SPD30P06P G
Quantity:
8 000
Part Number:
SPD30P06PG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
SPD30P06PG
0
Part Number:
SPD30P06PGBTMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
DS(on)
pF
W
0.24
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
10
10
Rev 2.0
-60
4
3
2
0
SPD30P06P
DS
= f ( T
)
-20
-5
D
GS
j
)
= -21.5 A, V
-10
=0V, f =1 MHz
20
98%
typ
-15
60
-20
GS
100
= -10 V
-25
140 °C
V
T
V
C
C
C
j
DS
iss
oss
rss
-35
200
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-5.0
-5.0
-5.0
-5.0
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
V
V
V
V
A
0.0
0.0
0.0
0.0
-60
-60
-60
-60
0.0
3
2
1
0
SPD30P06P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
20
20
20
20
= 80 µs
-1.2
DS
T
T
T
T
98%
j
j
j
j
2%
typ
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
, I
60
60
60
60
-1.6
D
= -1.7 mA
SPD30P06P
SPU30P06P
-2.0
100
100
100
100
2008-02-18
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
180
180
180
180

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