BSP320S E6327 Infineon Technologies, BSP320S E6327 Datasheet - Page 3

Manufacturer Part Number

BSP320S E6327

Description

MOSFET N-CH 60V 2.9A SOT-223

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSP320S_E6327.pdf (9 pages)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

120 mOhm @ 2.9A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

2.9A

Vgs(th) (max) @ Id

4V @ 20µA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

340pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

BSP320SE6327T
SP000011115

BSP320S

2008-03-26

Rev 2.3