BSP320S E6327 Infineon Technologies, BSP320S E6327 Datasheet - Page 8
![MOSFET N-CH 60V 2.9A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP320S E6327
Manufacturer Part Number
BSP320S E6327
Description
MOSFET N-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP320S_E6327.pdf
(9 pages)
Specifications of BSP320S E6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP320SE6327T
SP000011115
SP000011115
BSP320S
Rev 2.3
2008-03-26