IPP100N06S3-04 Infineon Technologies, IPP100N06S3-04 Datasheet

MOSFET N-CH 55V 100A TO-220

IPP100N06S3-04

Manufacturer Part Number
IPP100N06S3-04
Description
MOSFET N-CH 55V 100A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N06S3-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
314nC @ 10V
Input Capacitance (ciss) @ Vds
14230pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP100N06S3-04
IPP100N06S3-04IN
IPP100N06S304X
IPP100N06S304XK
SP000102212

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP100N06S3-04
Manufacturer:
INFINEON
Quantity:
12 500
Price:
Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N06S3-04
IPI100N06S3-04
IPP100N06S3-04
®
-T2 Power-Transistor
2)
3)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3PN0604
3PN0604
3PN0604
stg
PG-TO263-3-2
T
T
V
T
I
T
D
C
C
C
C
GS
=50 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPI100N06S3-04, IPP100N06S3-04
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
1090
100
100
400
100
±20
214
IPB100N06S3-04
PG-TO220-3-1
100
4.1
55
2007-11-07
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPP100N06S3-04

IPP100N06S3-04 Summary of contents

Page 1

... Marking 3PN0604 3PN0604 3PN0604 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 1090 100 ±20 214 -55 ... +175 55/175/ 4.1 m 100 A Unit °C 2007-11-07 ...

Page 2

... (BR)DSS =150 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 Values min. typ. max 0 2.1 3 100 = 100 - 3.5 4.4 - 3.2 4.1 Unit K µA nA mΩ 2007-11-07 ...

Page 3

... S T =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 0.7 K/W the chip is able to carry 164 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 Values min. typ. max. - 14230 = 2165 - 2070 - 209 - 5 0.6 0.9 ...

Page 4

... V DS Rev. 1.1 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...

Page 5

... GS DS parameter 200 175 150 125 100 Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 -55 °C 25 °C 175 ° [V] page 5 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- ° 5 [ -60 - 100 T [° 100 120 140 180 2007-11-07 ...

Page 6

... V SD Rev. 1.1 10 Typ. capacitances 1500µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- MHz GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...

Page 7

... A 500 100 T [° Typ. gate charge pulsed GS gate D parameter 100 150 Q gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 200 250 300 [nC] page 7 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- -60 - 100 T [° 140 180 gate gate 2007-11-07 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100N06S3-04, IPP100N06S3-04 page 8 IPB100N06S3-04 2007-11-07 ...

Page 9

... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI100N06S3-04, IPP100N06S3-04 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07.11.2007 07.11.2007 07 ...

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