IPP100N06S3-04 Infineon Technologies, IPP100N06S3-04 Datasheet - Page 6

MOSFET N-CH 55V 100A TO-220

IPP100N06S3-04

Manufacturer Part Number
IPP100N06S3-04
Description
MOSFET N-CH 55V 100A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N06S3-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
314nC @ 10V
Input Capacitance (ciss) @ Vds
14230pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP100N06S3-04
IPP100N06S3-04IN
IPP100N06S304X
IPP100N06S304XK
SP000102212

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N06S3-04
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
150µA
0.6
V
T
SD
j
60
[°C]
[V]
25 °C
0.8
1500µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AS
= f(t
1000
100
10
10
10
10
1
DS
5
4
3
AV
0
1
); V
)
Crss
Coss
Ciss
j(start)
GS
IPI100N06S3-04, IPP100N06S3-04
= 0 V; f = 1 MHz
5
150°C
10
10
t
V
AV
DS
15
[µs]
[V]
100°C
IPB100N06S3-04
100
20
25°C
25
2007-11-07
1000
30

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