SPU02N60S5 Infineon Technologies, SPU02N60S5 Datasheet

MOSFET N-CH 600V 1.8A TO-251

SPU02N60S5

Manufacturer Part Number
SPU02N60S5
Description
MOSFET N-CH 600V 1.8A TO-251
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPU02N60S5

Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
5.5V @ 80µA
Gate Charge (qg) @ Vgs
9.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
25000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
20 ns
Rise Time
35 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000012422
SPU02N60S5
SPU02N60S5IN
SPU02N60S5X
SPU02N60S5XK
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPU02N60S5
SPD02N60S5
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= 1.35 A, V
= 1.8 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO251
PG-TO252
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4226
Q67040-S4213
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
AS
AR
GS
GS
tot
j ,
T
stg
Marking
02N60S5
02N60S5
PG-TO252
2
R
-55... +150
DS(on)
V
I
DS
D
Value
0.07
±20
± 30
1.8
1.1
3.2
1.8
50
25
1
SPU02N60S5
SPD02N60S5
3
PG-TO251
2008-04-07
600
1.8
3
Unit
A
mJ
A
V
W
°C
1
V
A
2
3

Related parts for SPU02N60S5

SPU02N60S5 Summary of contents

Page 1

... Operating and storage temperature Rev. 2.5 Ordering Code Q67040-S4226 Q67040-S4213 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPU02N60S5 SPD02N60S5 600 DS(on) I 1.8 D PG-TO252 PG-TO251 Marking 02N60S5 02N60S5 Value 1.8 1.1 3.2 50 0.07 1.8 ±20 ± -55... +150 2008-04-07 V Ω ...

Page 2

... V =V GS(th =600V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =1.1A, V DS(on =25° =150° Page 2 SPU02N60S5 SPD02N60S5 Value Unit 20 V/ns Values Unit min. typ. max K 260 °C Values Unit min. typ. max. 600 - - V - 700 - 3 ...

Page 3

... Symbol Conditions ≥ DS(on)max =1.1A D =0V, V =25V iss f=1MHz oss C rss =350V, V =0/10V d(on =50 Ω I =1.8A d(off =350V, I =1. =350V, I =1.8A 10V =350V, I =1. (plateau) DD Page 3 SPU02N60S5 SPD02N60S5 Values min. typ. max 240 - - 7 2008-04-07 Unit ...

Page 4

... /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPU02N60S5 SPD02N60S5 Values min. typ 860 = 1.6 Value typ. 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 E xternal H eatsink T case Unit max. 1.8 A 3.2 1 ...

Page 5

... parameter µ Rev. 2.5 2 Safe operating area parameter : 100 120 °C 160 Drain-source on-state resistance R DS(on) parameter : I Ω 20V 12V 10V 9V 8. Page 5 SPU02N60S5 SPD02N60S5 ) DS =25° 0.001 SPU02N60S5 98% 4 typ 2 0 -60 - 100 °C 180 T j 2008-04-07 ...

Page 6

... Rev. 2.5 6 Typ. gate charge = DS(on)max GS parameter Avalanche SOA par 1.6 1.4 1.2 0.8 0.6 0.4 0 Page 6 SPU02N60S5 SPD02N60S5 ) Gate = 1.8 A pulsed D SPU02N60S5 16 0 max 0 max ≤ 150 ° j(START =125°C j(START Gate =25° ...

Page 7

... Avalanche energy par 1. 100 11 Typ. capacitances parameter: V =0V, f=1 MHz iss oss rss Rev. 2.5 10 Drain-source breakdown voltage V (BR)DSS 720 V 680 660 640 620 600 580 560 540 120 °C 160 100 V DS Page 7 SPU02N60S5 SPD02N60S5 = SPU02N60S5 -60 - 100 2008-04-07 °C 180 T j ...

Page 8

... Definition of diodes switching characteristics Rev. 2.5 Page 8 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 9

... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 9 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 10

... PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 10 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 11

... Rev. 2.5 Page 11 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Related keywords