IPD144N06N G Infineon Technologies, IPD144N06N G Datasheet - Page 5
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IPD144N06N G
Manufacturer Part Number
IPD144N06N G
Description
MOSFET N-CH 60V 50A TO-252
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD144N06N_G.pdf
(9 pages)
Specifications of IPD144N06N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 30V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0144 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
135 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD144N06N G
IPD144N06NGINTR
IPD144N06NGXT
SP000203941
IPD144N06NGINTR
IPD144N06NGXT
SP000203941
Rev.1.22
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
180
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
2
D
20 V
|R
DS(on)max
2
V
V
10 V
175 °C
DS
GS
4
7 V
[V]
4.5 V
[V]
6 V
6.5 V
5.5 V
5 V
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
50
40
30
20
10
70
60
50
40
30
20
10
D
=f(I
0
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
10
20
5 V
I
I
D
D
20
40
[A]
[A]
IPD144N06N G
30
60
20 V
6 V
7 V
5.5 V
10 V
6.5 V
2008-07-22
40
80