SPD07N20 Infineon Technologies, SPD07N20 Datasheet
SPD07N20
Specifications of SPD07N20
SPD07N20
SPD07N20INTR
SPD07N20NT
SPD07N20XT
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SPD07N20 Summary of contents
Page 1
... SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated • rated Type Package SPD07N20 PG-TO252 SPU07N20 PG-TO251 Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current ˚ 100 ˚C C Pulsed drain current ˚C C Avalanche energy, single pulse ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max D Input capacitance ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge V = 160 Gate to drain charge V = 160 ...
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... T C Transient thermal impedance thJC parameter : K 22.0 µ 100 µ Page 5 SPD 07N20 ) C ≥ SPD07N20 100 120 ) SPD07N20 D = 0.50 single pulse - ˚C 160 T C 0.20 0.10 0.05 0.02 0. 2007-01-16 ...
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... 0 Typ. forward transconductance parameter Page 6 SPD 07N20 = SPD07N20 [ 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8 25˚ 9.0 10.0 20 2007-01-16 ...
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... T j Forward characteristics of reverse diode parameter iss oss C rss - 0 Page 7 SPD 07N20 = -60 - 100 ) µ SPD07N20 ˚C typ 150 ˚C typ ˚C (98 150 ˚C (98%) j 0.4 0.8 1.2 1.6 2.0 2.4 max typ min ˚C 160 3 2007-01-16 ...
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... Drain-source breakdown voltage (BR)DSS j SPD07N20 245 V 235 230 225 220 215 210 205 200 195 190 185 180 -60 - Rev. 2.2 Typ. gate charge ) parameter: I SPD07N20 ˚C 0 120 160 T j 100 ˚C 180 T j Page 8 SPD 07N20 ) Gate = puls V 0,8 V 0,2 DS max DS max 4 ...