NTD20N06L-1G ON Semiconductor, NTD20N06L-1G Datasheet - Page 3

• Manufacturer Part Number: NTD20N06L-1G
• Description: MOSFET N-CH 60V 20A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20N06L-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 1.36W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
30
20
10
40
1.8
1.6
1.4
1.2
0.8
0.6
0
1
2
−50
0
0
V
8 V
V
GS
V
GS
−25
I
V
DS
D
= 10 V
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 5 V
= 10 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 5 V
Figure 3. On−Resistance versus
1
T
J
0
, JUNCTION TEMPERATURE (°C)
10
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
6 V
Temperature
2
T
T
T
J
50
J
J
= 100°C
= −55°C
5 V
= 25°C
20
75
3
100
30
125
4
4.5 V
3.5 V
4 V
3 V
http://onsemi.com
150
NTD20N06L
175
5
40
3
10000
0.055
0.045
0.035
0.025
0.015
0.085
0.075
0.065
1000
100
10
30
20
10
40
0
1.6
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
V
DS
T
GS
V
V
GS
J
DS
GS
= 100°C
≥ 10 V
= 10 V
10
T
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.4
J
= 25°C
10
I
D
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
versus Voltage
3.2
T
T
T
T
T
T
J
J
J
J
J
J
= 150°C
= 100°C
= −55°C
= 100°C
= −55°C
= 25°C
20
30
4
40
30
4.8
50
5.6
60
40