NTD20N06L-1G ON Semiconductor, NTD20N06L-1G Datasheet - Page 6
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NTD20N06L-1G
Manufacturer Part Number
NTD20N06L-1G
Description
MOSFET N-CH 60V 20A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD20N06LT4G.pdf
(8 pages)
Specifications of NTD20N06L-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
48 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
990pF @ 25V
Power - Max
1.36W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20N06L-1G
Manufacturer:
ON
Quantity:
12 500
100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
C
GS
Figure 11. Maximum Rated Forward Biased
0.00001
V
= 25°C
= 15 V
DS
0.02
0.05
D = 0.5
0.1
0.2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
0.01
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
100 ms
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
10 ms
S
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
10 ms
t
p
dc
http://onsemi.com
NTD20N06L
100
di/dt
t, TIME (s)
t
a
P
6
(pk)
t
rr
0.01
DUTY CYCLE, D = t
t
b
I
S
140
120
100
80
60
40
20
t
0.25 I
1
0
25
t
Figure 12. Maximum Avalanche Energy versus
2
S
T
J
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
0.1
1
TIME
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
qJC
(t) = r(t) R
− T
C
100
= P
qJC
(pk)
1
1
R
125
qJC
(t)
I
D
= 16 A
150
10
175