NTD20N06L-1G ON Semiconductor, NTD20N06L-1G Datasheet - Page 7
![MOSFET N-CH 60V 20A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD20N06L-1G
Manufacturer Part Number
NTD20N06L-1G
Description
MOSFET N-CH 60V 20A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD20N06LT4G.pdf
(8 pages)
Specifications of NTD20N06L-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
48 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
990pF @ 25V
Power - Max
1.36W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20N06L-1G
Manufacturer:
ON
Quantity:
12 500
V
S
F
1
B
R
G
4
2
3
L
K
A
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
M
0.228
5.80
C
T
−T−
E
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
SEATING
PLANE
U
0.244
0.101
6.20
2.58
http://onsemi.com
CASE 369C−01
NTD20N06L
ISSUE O
DPAK
7
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
DIM
PIN 1. GATE
PER ANSI Y14.5M, 1982.
A
B
C
D
E
F
G
H
K
L
R
S
U
V
Z
J
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.114
0.215
0.040
0.050
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−