NTD20N06L-1G ON Semiconductor, NTD20N06L-1G Datasheet - Page 7

• Manufacturer Part Number: NTD20N06L-1G
• Description: MOSFET N-CH 60V 20A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20N06L-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 1.36W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
S
F
1
B
R
G
4
2
3
L
K
A
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
M
0.228
5.80
C
T
−T−
E
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
SEATING
PLANE
U
0.244
0.101
6.20
2.58
http://onsemi.com
CASE 369C−01
NTD20N06L
ISSUE O
DPAK
7
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
DIM
PIN 1. GATE
PER ANSI Y14.5M, 1982.
A
B
C
D
E
F
G
H
K
L
R
S
U
V
Z
J
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.114
0.215
0.040
0.050
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−