HSMS-2855-TR2G Avago Technologies US Inc., HSMS-2855-TR2G Datasheet
HSMS-2855-TR2G
Specifications of HSMS-2855-TR2G
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HSMS-2855-TR2G Summary of contents
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... Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies below 4.0 GHz, and the HSMS-286x series at frequencies above 4.0 GHz. The HSMS-285x series IS NOT RECOMMENDED for these higher power level applications. ...
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... Test Conditions Notes: 1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA. 2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V. RF Electrical Specifications +25°C, Single Diode C Part Number Typical Tangential Sensitivity HSMS- TSS (dBm 915 MHz 2850 2852 2855 285B 285C 285L 285P Test ...
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... I = externally applied bias current in amps saturation current (see table of SPICE parameters temperature, ° ideality factor (see table of SPICE parameters) Note: To effectively model the packaged HSMS-285x product, please refer to Application Note AN1124. 3 Unit Absolute Maximum [1] SOT-23/143 SOT-323/363 V 2.0 2.0 °C ...
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Typical Parameters, Single Diode 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V – FORWARD VOLTAGE (V) F Figure 1. Typical Forward Current vs. Forward Voltage. 3.1 FREQUENCY = 2.45 GHz 2.9 P ...
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... In large signal power or gain control applications (P > -20 dBm), the HSMS-282x and HSMS-286x prod- in ucts should be used. The HSMS-285x zero bias diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by de- position of a metal layer on a semiconductor ...
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... bias current in µA b Saturation current is a function of the diode’s design constant at a given temperature. For the HSMS-285x series typically µA at 25°C. until the calculated P Saturation current sets the detection sensitivity, video re- sistance and input RF impedance of the zero bias Schottky detector diode ...
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... TRANSMISSION LINE DIMENSIONS ARE FOR MICROSTRIP ON 0.032" THICK FR-4. Figure 10. 915 MHz Matching Network for the HSMS-285x Series at Zero Bias inductor rotates the impedance of the diode to a point on the Smith Chart where a shunt inductor can HSMS-285A/6A fig 14 pull the center. The short length of 0.065" wide microstrip line is used to mount the lead of the diode’ ...
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... Schottky diodes have the least flicker noise at a given value of external bias (compared to n-type silicon or GaAs). At zero bias, such diodes can have extremely low values of flicker noise. For the HSMS-285x series, the noise temperature ratio is given in Figure 14 ...
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SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, ...
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... Part Number Ordering Information No. of Part Number Devices HSMS-285x-TR2G 10000 HSMS-285x-TR1G 3000 HSMS-285x-BLK G 100 where and P for HSMS-285x. Package Dimensions Outline 23 (SOT-23 XXX SYMBOL Notes: e2 XXX-package marking E Drawings are not to scale L 10 Container 13" Reel 7" Reel antistatic bag Outline SOT-323 (SC-70 3 Lead) ...
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Outline 143 (SOT-143 XXX SYMBOL A A1 Notes: XXX-package marking Drawings are not to scale Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE For Outline SOT-143 TOP VIEW 4 mm ...
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Tape Dimensions and Product Orientation For Outline SOT- 9° MAX A 0 DESCRIPTION SYMBOL SIZE (mm) 3.15 ± 0.10 CAVITY LENGTH A 0 WIDTH B 2.77 ± 0.10 0 1.22 ± 0.10 DEPTH K ...
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Tape Dimensions and Product Orientation For Outlines SOT-323, -363 DESCRIPTION SYMBOL CAVITY LENGTH A 0 WIDTH B 0 DEPTH K 0 PITCH P BOTTOM HOLE DIAMETER D 1 PERFORATION DIAMETER D PITCH ...