5082-3081 Avago Technologies US Inc., 5082-3081 Datasheet - Page 3
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5082-3081
Manufacturer Part Number
5082-3081
Description
DIODE PIN RF SWITCH 100V AXIAL
Manufacturer
Avago Technologies US Inc.
Specifications of 5082-3081
Package / Case
Axial
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
3.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
100 V
Frequency Range
VHF or UHF
Termination Style
Axial
Carrier Life
2.5 us
Maximum Diode Capacitance
0.4 pF @ 50 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
3.5 Ohm @ 100 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Capacitance, Junction
0.4 pF
Capacitance, Total
0.4 pF (Max.)
Current, Forward
250 mA
Package Type
Glass 15
Primary Type
Pin
Resistance, Series
3.5 Ohms (Max.)
Speed, Switching
RF
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Breakdown, Minimum
100 V
Voltage, Reverse
100 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5082-3081
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Mechanical Specifications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restricted so that the bend starts at least 1/16 inch (1.6 mm)
RF Current Controlled Resistor Diodes
Electrical Specifications at T
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
2
General Purpose Diodes
Electrical Specifications at T
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
Conditions I
Conditions
General Purpose Switching and Attenuating
Band Switching
5082-3080
5082-3379
5082-3081
1N5767*
1N5719
Number
Number
3001
3039
3077
3188
5082-
Test
Test
Part
Part
R
I
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
F
= 250 mA
Effective
= 50 mA
Lifetime
**V
Carrier
τ
Capacitance
*V
f = 1 MHz
V
Maximum
(ns)
R
C
R
R
Total
0.25
0.25
1.0*
= 50 V
T
0.3**
0.3
= 100 V
= 20 V
(pF)
A
A
= 25°C
= 25°C
I
Breakdown
Measure
R
V
≤ 10 µA
Voltage
R
V
Min.
100
100
100
BR
= V
50
(V)
BR
Breakdown
I
,
R
Minimum
Measure
V
Voltage
≤ 10 µA
V
R
200
150
150
200
BR
35
= V
f = 100 MHz
I
F
(V)
Resistance
= 100 mA
Residual
BR
R
Series
Max.
S
2.5
2.5
3.5
(
Ω
)
I
V
R
F
= 1 µA maximum at V
Residual Series
**I
f = 100 MHz
= 1 V maximum at I
*I
I
F
Resistance
Maximum
f = 1 MHz
F
Capacitance
V
=100 mA
F
= 20 mA
R
0.6**
R
= 10 mA
1.25
1.25
C
S
1.0
1.5
Max.
Total
= 50 V
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
T
0.4
0.4
0.4
0.4
(Ω)
(pF)
1000
1000
1500
I
f = 100 MHz
F
F
Limit, R
Min.
= 0.01 mA
Resistance
= 100 mA.
R
= 50 V
High
Effective Carrier
I
*I
I
R
100 (min.)
100 (min.)
100 (min.)
100 (min.)
*I
70 (typ.)*
F
H
F
= 250 mA
Max.
Lifetime
R
= 50 mA
(
= 10 mA
Ω
τ (ns)
= 6 mA
)
I
f = 100 MHz
F
I
Min.
Limit, R
F
= 20 mA**
Resistance
= 1.0 mA
Low
L
Max.
(
Ω
Reverse Recovery
90% Recovery
8**
8**
8**
)
8**
I
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
F
V
12 (typ.)
= 20 mA
R
t
Time
rr
= 10 V
I
f = 100 MHz
Matched at
and 1.0 mA
F
(ns)
= 0.01 mA
Resistance
Difference
Slope, Dc
Batch
vs. Bias
Max.
in