NE3514S02-A CEL, NE3514S02-A Datasheet

HJ-FET NCH 10DB S02

NE3514S02-A

Manufacturer Part Number
NE3514S02-A
Description
HJ-FET NCH 10DB S02
Manufacturer
CEL
Datasheets

Specifications of NE3514S02-A

Transistor Type
HFET
Frequency
20GHz
Gain
10dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.75dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Drain Source Voltage Vds
4 V
Gate-source Cutoff Voltage
- 0.7 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

Related parts for NE3514S02-A

NE3514S02-A Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... ORDERING INFORMATION Part Number Order Number NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3514S02 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation ...

Page 4

... Noise Figure NF Associated Gain +25°C) A MIN. TYP. MAX. Unit − − 0 dBm in = +25°C, unless otherwise specified) A Test Conditions = − µ 100 mA GHz Data Sheet PG10593EJ01V0DS NE3514S02 MIN. TYP. MAX. Unit µ − 0 −0.2 −0.7 −2.0 V − − 0.75 1.0 dB − ...

Page 5

... G a 1.2 1.0 0.8 0.6 NF min 0.4 0.2 0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. = +25°C, unless otherwise specified) A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 200 250 0 (˚ ( Data Sheet PG10593EJ01V0DS NE3514S02 –0.2 V –0.4 V –0.6 V 1.0 2.0 Drain to Source Voltage V ( ...

Page 6

... S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 4 Data Sheet PG10593EJ01V0DS NE3514S02 ...

Page 7

... RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) Reference Plane (Calibration Plane) φ 0.3 TH RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz 2.80 2.60 2.06 0.64 1.7 mm/R.P. 2.6 1.7 1.7 Reference Plane (Calibration Plane) L2–uX Ver. 1 6.0 Data Sheet PG10593EJ01V0DS NE3514S02 5 ...

Page 8

... PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) 0.65 TYP (Side View) 6 (Bottom View) 3.2±0 2.2±0.2 1.7 3.2±0.2 PIN CONNECTIONS 1. Source 2. Drain 3. Source 4. Gate Data Sheet PG10593EJ01V0DS NE3514S02 2.2±0 ...

Page 9

... Caution Do not use different soldering methods together (except for partial heating). Soldering Conditions : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PG10593EJ01V0DS NE3514S02 For soldering Condition Symbol IR260 HS350 7 ...

Page 10

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Data Sheet PG10593EJ01V0DS NE3514S02 Not all The M8E 00 0110 ...

Page 11

... TEL: +852-3107-7303 TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE3514S02 0504 ...

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