BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 8

• Manufacturer Part Number: BLF202,115
• Description: TRANSISTOR RF DMOS SOT409A
• Manufacturer: NXP Semiconductors

Specifications of BLF202,115

• Package / Case: SOT-409A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 1A
• Current - Test: 20mA
• Voltage - Test: 12.5V
• Power - Output: 2W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2410-2; 934055627115; BLF202 T/R; BLF202 T/R

Philips Semiconductors
List of components (see Fig.10)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (
2003 Sep 19
C1, C11
C2, C9
C3, C5
C4, C6
C7
C8
C10
L1
L2, L3
L4
L5
L6
R1
R2
R3
R4
R5
R6
HF/VHF power MOS transistor
COMPONENT
1.6 mm.
film dielectric trimmer
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor
Sprague electrolytic tantalum
capacitor
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
8 turns enamelled 0.8 mm copper
wire
stripline; note 2
3 turns enamelled 1 mm copper wire 57 nH
9 turns enamelled 1 mm copper wire 355 nH
grade 3B Ferroxcube RF choke
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
DESCRIPTION
8
2 to 9 pF
2 to 9 pF
1 nF; 500 V
2
in parallel,
50 V
2.2 F; 35 V
5.1 pF; 500 V
9.1 pF; 500 V
137 nH
81
237
1 k
1 M
5 k
7.5 k
10
VALUE
100 nF
length 5.1 mm;
int. dia. 4 mm;
leads 2
8 mm
length 5 mm;
int. dia. 6 mm;
leads 2
length 11 mm;
int. dia. 7 mm;
leads 2
DIMENSIONS
2 mm
5 mm
5 mm
5 mm
2222 809 09005
2222 809 09002
2222 852 47104
4312 020 36642
2322 151 72371
2322 151 71002
2322 151 71005
2322 151 77502
2322 153 51009
Product specification
CATALOGUE NO.
r
= 2.2), thickness
BLF202