BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 9

• Manufacturer Part Number: BLF202,115
• Description: TRANSISTOR RF DMOS SOT409A
• Manufacturer: NXP Semiconductors

Specifications of BLF202,115

• Package / Case: SOT-409A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 1A
• Current - Test: 20mA
• Voltage - Test: 12.5V
• Power - Output: 2W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2410-2; 934055627115; BLF202 T/R; BLF202 T/R

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class B-operation; V
R
Fig.11 Input impedance as a function of frequency
GS
( )
Z i
250
125
125
= 237 ; P
0
0
Fig.13 Definition of MOS impedance.
(series of components); typical values.
L
Z i
= 2 W.
50
DS
= 12.5 V; I
r i
x i
100
DQ
Z L
= 20 mA;
MBA379
150
f (MHz)
MGP119
200
9
handbook, halfpage
handbook, halfpage
Class B-operation; V
R
Fig.12 Load impedance as a function of frequency
Class B-operation; V
R
Fig.14 Power gain as a function of frequency;
GS
(dB)
GS
G p
( )
Z L
= 237 ; P
= 237 ; P
20
15
10
50
40
30
20
10
5
0
0
0
0
(series components); typical values.
typical values.
L
L
= 2 W.
= 2 W.
50
50
DS
DS
= 12.5 V; I
= 12.5 V; I
100
100
DQ
DQ
= 20 mA;
= 20 mA;
R L
X L
Product specification
150
150
f (MHz)
f (MHz)
BLF202
MGP121
MGP120
200
200