BLF1043,112 NXP Semiconductors, BLF1043,112 Datasheet - Page 8
BLF1043,112
Manufacturer Part Number
BLF1043,112
Description
TRANSISTOR RF LDMOS SOT538A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF1043112.pdf
(12 pages)
Specifications of BLF1043,112
Package / Case
SOT-538A
Transistor Type
LDMOS
Frequency
960MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
1.05 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2409
934055708112
BLF1043
BLF1043
934055708112
BLF1043
BLF1043
Philips Semiconductors
2003 Mar 13
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
Fig.10 Component layout for 960 MHz class-AB test circuit.
C2
C1
R1
V GS
C4
C3
8
52.3
BLF1043
C10
V DS
C12
C9
C8
C7
C11
L2
L1
R2
r
= 2.2), thickness 0.51 mm.
MDB154
C6
C5
53.7
Product specification
BLF1043