MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 2

IC MOSFET RF N-CHAN PLD-1.5

MRF1518NT1

Manufacturer Part Number
MRF1518NT1
Description
IC MOSFET RF N-CHAN PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1518NT1

Transistor Type
N-Channel
Frequency
520MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PLD-1.5
Configuration
Single Dual Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
4mA
Power Dissipation Pd
62.5W
Rf Transistor Case
PLD-1.5
Termination Type
SMD
Output Power Pout
8W
Rohs Compliant
Yes
Filter Terminals
SMD
Gate-source Voltage
20V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MRF1518NT1
MRF1518NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1518NT1
Manufacturer:
FREESCALE
Quantity:
1 400
Company:
Part Number:
MRF1518NT1
Quantity:
255
MRF1518NT1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain - Source On - Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
GS
DS
GS
DS
DS
DS
DD
DD
= 40 Vdc, V
= 12.5 Vdc, I
= 12.5 Vdc, V
= 12.5 Vdc, V
= 12.5 Vdc, V
= 10 Vdc, V
= 10 Vdc, I
= 12.5 Vdc, P
= 12.5 Vdc, P
D
GS
DS
D
= 1 Adc)
GS
GS
GS
out
out
= 100 μA)
= 0 Vdc)
= 0 Vdc)
= 8 Watts, I
= 8 Watts, I
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
Characteristic
DQ
DQ
(T
= 150 mA, f = 520 MHz)
= 150 mA, f = 520 MHz)
A
= 25°C unless otherwise noted)
Symbol
V
V
I
C
I
DS(on)
GS(th)
C
C
G
DSS
GSS
η
oss
rss
iss
ps
Min
1
Typ
1.6
0.4
4.5
66
33
13
60
Freescale Semiconductor
Max
2.1
1
1
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
pF
pF
pF
dB
%

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