BF998E6327 Infineon Technologies, BF998E6327 Datasheet - Page 4

• Manufacturer Part Number: BF998E6327
• Description: MOSFET N-CH 12V 200MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF998E6327

• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 28dB
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 2.8dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Other names: BF998; BF998E6327XT; BF998INTR; BF998XTINTR; BF998XTINTR; SP000010978

Total power dissipation P
BF998, BF998R
Gate 1 forward transconductance
g
V
fs
DS
mW
=
mS
220
180
160
140
120
100
= 5V, V
80
60
40
20
26
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0
(I
D
15
)
0V
G2S
4
30
= Parameter
45
8
1V
60
12
75
90 105 120 °C
tot
16
2V
= (T
4V
mA
S
)
T
I
D
S
150
24
4
Output characteristics I
V
V
Gate 1 forward transconductance
g
fs1
G2S
G1S
mA
mS
=
26
22
20
18
16
14
12
10
26
22
20
18
16
14
12
10
= 4 V
= Parameter
8
6
4
2
0
8
6
4
2
0
-1
0
(V
G1S
-0.75
2
)
-0.5
4
-0.25
6
D
8
0
=
0.2V
0.4V
-0.4V
-0.2V
0V
0.25
10
(V
2007-04-20
DS
BF998...
4V
)
V
V
2V
1V
0V
V
V
DS
G1S
0.75
14