NE552R479A-T1-A CEL, NE552R479A-T1-A Datasheet

NE552R479A-T1-A

Manufacturer Part Number

NE552R479A-T1-A

Description

MOSFET LD N-CHAN 3V 79A

Manufacturer

CEL

Datasheet

1.NE552R479A-T1-A.pdf (9 pages)

Specifications of NE552R479A-T1-A

Transistor Type

N-Channel

Frequency

2.45GHz

Gain

11dB

Voltage - Rated

15V

Current Rating

300mA

Current - Test

200mA

Voltage - Test

Power - Output

26dBm

Package / Case

79A

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

15 V

Gate-source Breakdown Voltage

5 V

Continuous Drain Current

300 mA

Power Dissipation

10 W

Mounting Style

SMD/SMT

Forward Transconductance Gfs (max / Min)

0.4 S

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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DESCRIPTION

NEC's NE552R479A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the transmission

power ampliﬁer for mobile and ﬁxed wireless applications.

Die are manufactured using NEC's NEWMOS2 technology

(NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a

surface mount package.

ELECTRICAL CHARACTERISTICS

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

• HIGH OUTPUT POWER: +26 dBm TYP at V

• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

• SINGLE SUPPLY: 2.8 to 6 V

• SURFACE MOUNT PACKAGE: 5.7

Notes:

1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

SYMBOLS

GSS

DSS

OUT

ADD

DSS

MEDIUM POWER SILICON LD-MOSFET

Output Power

Linear Gain

Power Added Efﬁciency

Drain Current

Gate-to-Source Leakage Current

Saturated Drain Current

(Zero Gate Voltage Drain Voltage)

Gate Threshold Voltage

Transconductance

Drain-to-Source Breakdown Voltage

Thermal Resistance

PACKAGE OUTLINE

PART NUMBER

CHARACTERISTICS

NEC's 3.0 V, 0.25 W L&S-BAND

5.7

1.1 mm MAX

= 3.0 V

= 25°C)

UNITS

°C/W

dBm

24.0

MIN

NE552R479A

OUTLINE DIMENSIONS

APPLICATIONS

• DIGITAL CELLULAR PHONES:

• ANALOG CELLULAR PHONES:

• OTHERS:

3.0 V GSM1900 Pre Driver

2.4 V AMPS Handsets

W-LAN

Short Range Wireless

Retail Business Radio

Special Mobile Radio

TYP

26.0

79A

11.0

230

1.4

0.4

Gate

California Eastern Laboratories

MAX

4.2 MAX.

5.7 MAX.

100

1.9

Source

0.4±0.15

PACKAGE OUTLINE 79A

Drain

Pin = 10 dBm for linear gain

f = 2.45 GHz, V

DSQ

TEST CONDITIONS

Channel-to-Case

NE552R479A

= 3.5 V, I

= 200 mA (RF OFF)

= 19 dBm, except

(Units in mm)

DSS

Gate

= 10 μA

= 5.0 V

= 6.0 V

(Bottom View)

100 mA

= 3.0 V,

1.5±0.2

3.6±0.2

Source

1 mA

0.8 MAX.

Drain

Related parts for NE552R479A-T1-A

NE552R479A-T1-A Summary of contents

Page 1

... HIGH LINEAR GAIN TYP @ 2.45 GHz • SINGLE SUPPLY: 2 • SURFACE MOUNT PACKAGE: 5.7 DESCRIPTION NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power ampliﬁer for mobile and ﬁxed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 μ ...

Page 2

... Operation in excess of any one of these parameters may result in permanent damage. 2. Duty cycle 50%, Ton ≤ ORDERING INFORMATION PART NUMBER NE552R479A-T1A-A • wide embossed taping. • Gate pin faces the perforation side of the tape. • 5 kpcs/Reel TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER 30 Frequency = 2.45 GHz 100 out 20 η ...

Page 4

... TYPICAL SCATTERING PARAMETERS Note: This ﬁle and many other s-parameter ﬁles can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE552R479A FREQUENCY S 11 GHz MAG ANG 0.10 0.877 - 70.3 0.20 0.806 -108.8 0.30 0.775 -129.7 0.40 0.764 -142.5 ...

Page 5

... TYPICAL SCATTERING PARAMETERS Note: This ﬁle and many other s-parameter ﬁles can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE552R479A 200 FREQUENCY S 11 GHz MAG ANG 0.10 0.881 - 80.4 0.20 0.833 -119.4 0.30 0.813 -139.1 0.40 0.805 -151 ...

Page 6

... APPLICATION CIRCUIT (2.40-2.48 GHz C11 P1 GND C13 J1 IN C14 er=4.2 t=0.028 J3 +Vg C13 C11 INPUT NE552R479A PARTS LIST 1 600S3R3CW C14 1 TF-100637 4 2 MCH185A101JK C2,C3 1 MCR03J200 R1 2 600S2R7BW C4,C7 2 600S5R6CW C1,C5 1 600S1R5CW C6 2 TAJB475K010R C12, C13 2 MCH215F104ZP C10, C11 2 0805CG102J9BB04 C8 NE552R479A U1 1 703401 ...

Page 7

TYPICAL APPLICATION CIRCUIT PERFORMANCE OUTPUT POWER vs. INPUT POWER 2.44 GHz 3.6 V, 100mA 22 3.6 V, 300mA Input Power, P (dBm) IN ...

Page 8

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 9

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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