MRF6S27015NR1 Freescale Semiconductor, MRF6S27015NR1 Datasheet - Page 5

• Manufacturer Part Number: MRF6S27015NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S27015NR1

• Transistor Type: N-Channel
• Frequency: 2.6GHz
• Gain: 14dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 160mA
• Voltage - Test: 28V
• Power - Output: 3W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
16
15
14
13
12
1
160 mA
130 mA
190 mA
80 mA
Figure 5. Two - Tone Power Gain versus
I
DQ
= 240 mA
P
out
, OUTPUT POWER (WATTS) PEP
V
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
Output Power
DD
= 28 Vdc
Figure 3. Single - Carrier W - CDMA Broadband Performance
Figure 4. Single - Carrier W - CDMA Broadband Performance
16
15
14
13
12
10
15
14
13
12
10
11
11
9
8
9
8
7
2500
2500
G
G
η
η
ACPR
10
ALT1
ps
ps
D
D
ACPR
2520
ALT1
2520
IRL
2540
2540
IRL
TYPICAL CHARACTERISTICS
2560
2560
@ P
@ P
V
I
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
DQ
V
I
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DQ
DD
out
out
2580
DD
2580
= 160 mA, Single−Carrier W−CDMA
= 28 Vdc, P
= 160 mA, Single−Carrier W−CDMA
= 28 Vdc, P
= 3 Watts Avg.
= 6 Watts Avg.
2600
2600
2620
out
2620
out
= 6 W (Avg.)
= 3 W (Avg.)
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
2640
2640
1
Figure 6. Third Order Intermodulation Distortion
2660
130 mA
2660
V
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements
I
DQ
DD
= 80 mA
= 28 Vdc
2680
2680
P
2700
2700
out
MRF6S27015NR1 MRF6S27015GNR1
, OUTPUT POWER (WATTS) PEP
versus Output Power
24
23
22
21
20
−30
−40
−50
−60
32
31
30
29
28
−30
−40
−50
−60
240 mA
160 mA
−5
−10
−15
−20
−25
−5
−10
−15
−20
−25
10
190 mA
5