MRF6S27015NR1 Freescale Semiconductor, MRF6S27015NR1 Datasheet - Page 6

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MRF6S27015NR1

Manufacturer Part Number
MRF6S27015NR1
Description
IC MOSFET RF N-CHAN TO270-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S27015NR1

Transistor Type
N-Channel
Frequency
2.6GHz
Gain
14dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
160mA
Voltage - Test
28V
Power - Output
3W
Package / Case
TO-270-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S27015NR1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF6S27015NR1 MRF6S27015GNR1
6
−65
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
1
3rd Order
5th Order
Figure 7. Intermodulation Distortion Products
V
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DD
7th Order
= 28 Vdc, I
P
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 160 mA
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power
50
49
48
47
46
45
44
43
42
41
40
50
45
40
35
30
25
20
15
10
5
26
10
Gain and Drain Efficiency versus Output Power
P1dB = 43 dBm (20 W)
V
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
DD
Figure 9. Pulsed CW Output Power versus
27
= 28 Vdc, I
TYPICAL CHARACTERISTICS
P3dB = 43.7 dBm (23 W)
28
1
P
ACPR
out
DQ
P6dB = 44.3 dBm (27 W)
, OUTPUT POWER (WATTS) AVG.
29
= 160 mA, f = 2600 MHz
P
in
, INPUT POWER (dBm)
Input Power
30
V
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
DD
= 28 Vdc, I
31
η
−25
−30
−35
−40
−45
−50
−55
−60
D
32
DQ
1
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
Figure 8. Intermodulation Distortion Products
V
I
= 160 mA
DQ
DD
33
= 160 mA
= 28 Vdc, P
34
10
Ideal
ALT1
35
out
Actual
G
versus Tone Spacing
TWO−TONE SPACING (MHz)
ps
= 15 W (PEP)
IM7−U
IM7−L
36
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
10
Freescale Semiconductor
IM5−L
IM5−U
IM3−U
IM3−L
RF Device Data
100

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