BLF4G20S-110B,112 NXP Semiconductors, BLF4G20S-110B,112 Datasheet - Page 12

• Manufacturer Part Number: BLF4G20S-110B,112
• Description: BASESTATION FINAL 2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20S-110B,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 700mA
• Voltage - Test: 28V
• Power - Output: 100W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2415; 934058896112; BLF4G20S-110B; BLF4G20S-110B

Philips Semiconductors
11. Revision history
Table 10:
9397 750 14611
Product data sheet
Document ID
BLF4G20-110B_4G20S-110B_1
Revision history
Release
date
20060123
BLF4G20-110B; BLF4G20S-110B
Rev. 01 — 23 January 2006
Data sheet status
Product data sheet
Change
notice
-
UHF power LDMOS transistor
Doc. number
6397 750 14611 -
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
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