BLF1822-10,112 NXP Semiconductors, BLF1822-10,112 Datasheet - Page 8

• Manufacturer Part Number: BLF1822-10,112
• Description: TRANSISTOR UHF PWR LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1822-10,112

• Transistor Type: LDMOS
• Frequency: 2.2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 18.5@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 39%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934056582112

Philips Semiconductors
2003 Feb 10
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
60
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
BLF1822-10 2.2 GHz input
BLF1822-10 2.2 GHz input
C1
C2
C3
V gate
33
R3
C4
C6
C5
8
BLF1822-10 2.2 GHz output
BLF1822-10 2.2 GHz output
C7
C19
C8
C20
V DD
33
C18
C11 C12
C9
r
C17
= 2.2), thickness 0.51 mm.
L10
C10
MGW651
60
BLF1822-10
Product specification