MRF9080LR3 Freescale Semiconductor, MRF9080LR3 Datasheet - Page 7

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MRF9080LR3

Manufacturer Part Number
MRF9080LR3
Description
IC MOSFET RF N-CHAN NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9080LR3

Transistor Type
N-Channel
Frequency
960MHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
26V
Power - Output
75W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
18.5dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
NI-780
Pin Count
3
Forward Transconductance (typ)
8S
Output Capacitance (typ)@vds
73@26VpF
Reverse Capacitance (typ)
2.9@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Mode Of Operation
GSM
Number Of Elements
1
Power Dissipation (max)
250000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
21
850
21
20
19
18
17
20
19
18
17
16
1
1
Figure 7. Power Gain and Input Return Loss
870
Figure 5. Power Gain versus Output Power
800 mA
400 mA
600 mA
Figure 9. Power Gain versus Output Power
V
I
T = 25°C
I
DQ
DQ
DD
= 600 mA
= 1000 mA
= 26 Vdc
890
P
out
910
, OUTPUT POWER (WATTS)
P
versus Frequency
25°C
50°C
85°C
out
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
f, FREQUENCY (MHz)
, OUTPUT POWER (WATTS)
930
70 W
G
950
ps
10
10
970
IRL
P
out
70 W
990
= 20 W
V
I
f = 940 MHz
DQ
DD
= 600 mA
1010
V
f = 940 MHz
T = 25°C
TYPICAL CHARACTERISTICS
= 26 Vdc
P
DD
out
= 26 Vdc
= 20 W
1030 1050
100
0
−5
−10
−15
−20
−25
−30
100
100
110
90
80
70
60
50
40
30
20
10
120
100
110
0
90
80
70
60
50
40
30
20
10
0
0
Figure 10. Output Power and Efficiency versus Input
0
20
19
18
17
1
Figure 8. Output Power and Efficiency versus
0.2
0.2
Figure 6. Power Gain versus Output Power
I
f = 940 MHz
T = 25°C
DQ
h
0.4
h
0.4
= 600 mA
25°C
P
out
0.6
P
P
, OUTPUT POWER (WATTS)
0.6
in
in
25°C
, INPUT POWER (WATTS)
, INPUT POWER (WATTS)
85°C
0.8
Input Power
P
0.8
P
85°C
out
out
Power
1
10
1
1.2
1.2
V
I
f = 940 MHz
DQ
V
DD
DD
26 Vdc
V
I
f = 940 MHz
T = 25°C
1.4
DQ
= 600 mA
DD
1.4
= 26 Vdc
= 22 Vdc
= 600 mA
= 26 Vdc
MRF9080LR3
1.6
1.6
30 Vdc
1.8
1.8
55
50
45
40
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
100
7

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