BFT93,215 NXP Semiconductors, BFT93,215 Datasheet - Page 4

• Manufacturer Part Number: BFT93,215
• Description: TRANS PNP 12V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT93,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.4dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5 GHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 2 V
• Continuous Collector Current: - 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1993-2; 933347740215; BFT93 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
November 1992
I
h
f
C
C
C
G
F
V
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
o
PNP 5 GHz wideband transistor
c
e
re
UM
V
V
V
measured at f
G
im
p
q
r
UM
= V
UM
= V
= V
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
=
6 dB; f
at d
6 dB; f
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
10 log
im
(pqr
= 60 dB; f
r
q
--------------------------------------------------------- - dB.

= 505.25 MHz;
PARAMETER
1
= 503.25 MHz;
) = 493.25 MHz.
–
S
11
S
p
2
 1
21
= 495.25 MHz;

C
2
–
= 30 mA; V
S
22
2

I
I
I
f = 500 MHz
I
I
I
I
f = 500 MHz; T
I
f = 500 MHz; T
see Fig.2 and note 2
E
C
C
E
c
C
C
C
CE
= i
= 0; V
= i
= 30 mA; V
= 30 mA; V
= 2 mA; V
= 30 mA; V
= 10 mA; V
c
e
= 5 V; R
= 0; V
= 0; V
CB
CONDITIONS
= 5 V
EB
CB
4
CE
12
L
= 0.5 V; f = 1 MHz
amb
amb
CE
CE
CE
CE
= 10 V; f = 1 MHz
= 75 ;
is zero and
= 5 V; f = 1 MHz
= 5 V
= 5 V;
= 5 V;
= 5 V;
= 25 C
= 25 C

20







MIN.

50
5
0.95
1.8
1
16.5
2.4
300
TYP.
Product specification
50








MAX.
BFT93
nA
GHz
pF
pF
pF
dB
dB
mV
UNIT