BFT93,215 NXP Semiconductors, BFT93,215 Datasheet - Page 5

• Manufacturer Part Number: BFT93,215
• Description: TRANS PNP 12V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT93,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.4dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5 GHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 2 V
• Continuous Collector Current: - 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1993-2; 933347740215; BFT93 T/R

NXP Semiconductors
November 1992
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
I
Fig.4
E
(pF)
C c
input
75 Ω
= i
2.0
1.6
1.2
0.8
0.4
Fig.2 Intermodulation distortion test circuit.
e
0
= 0; f = 1 MHz; T
0
Collector capacitance as a function of
collector-base voltage.
390 Ω
680 pF
4
L2
j
= 25 C.
8
L3
L1
240 Ω
1.2 kΩ
12
680 pF
24 V
V CB (V)
DUT
16
560 Ω
16 Ω
680 pF
MEA383
MEA925
20
output
75 Ω
5
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
(GHz)
h
CE
CE
f T
FE
60
40
20
10
= 5 V; T
= 5 V; f = 500 MHz; T
6
4
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
10
j
= 25 C.
20
20
Product specification
30
30
–I
–I
C
C
MEA382
MEA381
(mA)
(mA)
BFT93
40
40