BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 2

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

Philips Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
1998 Oct 15
V
V
I
P
h
C
f
G
|S
SYMBOL
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
communications subscriber
equipment in the GHz range
Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.
CBO
CEO
tot
re
NPN 5 GHz wideband transistors
UM
MATV/CATV amplifiers and RF
21
|
2
collector-base voltage
collector-emitter voltage open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
PARAMETER
open emitter
T
I
I
I
I
I
C
C
C
C
C
s
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
= 70 mA; V
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
BFG590W
BFG590W/X
85 C
PIN
1
2
3
4
1
2
3
4
CB
= 8 V; f = 1 MHz
collector
base
emitter
emitter
collector
emitter
base
emitter
CE
CE
CE
CE
= 8 V
= 4 V; f = 1 GHz; T
= 4 V; f = 900 MHz; T
= 4 V; f = 900 MHz; T
CONDITIONS
DESCRIPTION
2
amb
amb
amb
= 25 C
BFG590W; BFG590W/X
= 25 C
= 25 C
page
MARKING
BFG590W
BFG590W/X
TYPE NUMBER
60
MIN.
Fig.1 SOT343N.
4
1
Top view
Product specification
90
0.7
5
13
11
TYP. MAX. UNIT
20
15
200
500
250
3
2
CODE
MBK523
T1
T2
V
V
mA
mW
pF
GHz
dB
dB