BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 10

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
8. Package outline
Fig 14. Package outline SOT343F
BFG424F_1
Product data sheet
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343F
max
0.75
0.65
A
0.4
0.3
b
w
p
M
A
0.7
0.5
b
1
3
2
IEC
b
0.25
0.10
p
c
y
2.2
1.8
D
e
D
1
e
1.35
1.15
JEDEC
E
b
1
REFERENCES
1.3
e
0
4
1
Rev. 01 — 21 March 2006
1.15
e
1
A
w
JEITA
H
2.2
2.0
M
E
scale
A
1
0.48
0.38
L
p
0.2
w
2 mm
0.1
y
A
NPN 25 GHz wideband transistor
detail X
H
PROJECTION
E
EUROPEAN
E
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
L
p
c
BFG424F
X
ISSUE DATE
05-07-12
06-03-16
SOT343F
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