BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 4

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
7. Characteristics
BFG424F_1
Product data sheet
Table 7:
T
[1]
[2]
Symbol Parameter
V
V
V
I
h
C
C
C
f
G
NF
P
IP3
s
CBO
T
j
FE
(BR)CBO
(BR)CEO
(BR)EBO
L(1dB)
CES
EBS
CBS
21
p(max)
= 25 C; unless otherwise specified.
2
G
Z
S
p(max)
is optimized for noise; Z
collector-base
breakdown voltage
collector-emitter
breakdown voltage
open-collector
emitter-base
breakdown voltage
collector-base
cut-off current
DC current gain
collector-emitter
capacitance
emitter-base
capacitance
collector-base
capacitance
transition frequency I
maximum power
gain
insertion power gain I
noise figure
output power at
1 dB gain
compression
third-order intercept
point
is the maximum power gain, if K
Characteristics
Rev. 01 — 21 March 2006
L
is optimized for gain.
Conditions
I
I
I
I
I
V
V
V
T
I
T
T
I
f = 900 MHz;
I
I
Z
I
Z
C
C
E
E
C
C
C
C
C
C
C
C
amb
amb
amb
S
S
S
CB
EB
CB
= 2.5 A; I
= 0 mA; V
= 2.5 A; I
= 1 mA; I
= 25 mA; V
= 25 mA; V
= 25 mA; V
= 25 mA; V
= 2 mA; V
= 2 mA; V
= 25 mA; V
= 25 mA; V
=
= Z
= Z
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 C
= 25 C
= 25 C
S(opt)
S(opt)
opt
1. If K
; Z
; Z
B
CB
CE
CE
E
C
= 0 mA
CE
CE
CE
CE
CE
CE
L
L
= 0 mA
= 0 mA
S
= 4.5 V
= Z
= Z
= 2 V;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V
=
1 then G
L(opt)
L(opt)
opt
p(max)
NPN 25 GHz wideband transistor
= MSG, see
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[2]
[2]
Min
10
4.5
1
-
50
-
-
-
-
-
-
-
-
-
-
Figure
BFG424F
Typ
-
-
-
-
80
363
475
102
25
23
18.5
0.8
1.2
12
22
8.
Max
-
-
-
15
120
-
-
-
-
-
-
-
-
-
-
4 of 13
Unit
V
V
V
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
dBm