BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 5

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
BFG424F_1
Product data sheet
Fig 2. Collector current as a function of
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
(mA)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
I
C
40
30
20
10
0
collector-emitter voltage; typical values
f = 1 MHz
B
B
B
B
B
B
B
B
0
= 400 A
= 350 A
= 300 A
= 250 A
= 200 A
= 150 A
= 100 A
= 50 A
1
2
3
C
(fF)
CBS
200
160
120
80
40
0
0
4
001aad818
V
CE
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(V)
1
Rev. 01 — 21 March 2006
5
2
Fig 3. DC current gain as a function of collector
3
(1) V
(2) V
(3) V
h
FE
120
80
40
0
current; typical values
0
CE
CE
CE
4
001aad820
V
= 3 V
= 2 V
= 1 V
CB
(V)
5
10
NPN 25 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
20
BFG424F
30
I
001aad819
C
(mA)
(1)
(2)
(3)
40
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