NE68019-A CEL, NE68019-A Datasheet

no-image

NE68019-A

Manufacturer Part Number
NE68019-A
Description
TRANSISTOR NPN 2GHZ 3-SMD
Manufacturer
CEL
Datasheet
1.NE68019-T1-A.pdf (20 pages)

Specifications of NE68019-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
10GHz
Noise Figure (db Typ @ F)
1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Gain
9.6dB ~ 13.5dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
3 GHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.035 A
Power Dissipation
0.1 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NEC's NE680 series of NPN epitaxial silicon transistors is de-
signed for low noise, high gain and low cost applications. Both
the chip and micro-x versions are suitable for applications up
to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 se-
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: f
• LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• EXCELLENT LOW VOLTAGE
DESCRIPTION
T
makes it ideal for low voltage/low current applications, down
1.7 dB at 2 GHz
2.6 dB at 4 GHz
12.5 dB at 2 GHz
LOW CURRENT PERFORMANCE
8.0 dB at 4 GHz
2.5
2.0
1.5
1.0
.5
300
NOISE FIGURE & ASSOCIATED GAIN
500
Frequency, f (GHz)
vs. FREQUENCY
1000
NE68018
6V, 5 mA
3V, 5 mA
2000
3000
FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH
T
= 10 GHz
15
10
25
20
5
18 (SOT 343 STYLE)
00 (CHIP)
39 (SOT 143 STYLE)
30 (SOT 323
California Eastern Laboratories
19 (3 PIN ULTRA
SUPER MINI MOLD)
35 (MICRO-X)
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
NE680
SERIES

Related parts for NE68019-A

Image
Part Number
Description
Manufacturer
Datasheet
Request R
CEL-V325-HC
Part Number:
CEL-V325-HC
Description:
Dantona CEL-V325-HC Cell Phone Battery Fits Motorola Q & BT-50
Manufacturer:
DANTONA INDUSTRIES
CEL-128NMH
Part Number:
CEL-128NMH
Description:
FRS RADIO BATTERIES 3.6 VOLTS / 1600 MAH
Manufacturer:
DANTONA INDUSTRIES
CEL-128
Part Number:
CEL-128
Description:
3.6 VOLT 600 MAH NICAD BATTERY
Manufacturer:
DANTONA INDUSTRIES
CEL-VX4400
Part Number:
CEL-VX4400
Description:
CELL PHONE BATTERY
Manufacturer:
DANTONA INDUSTRIES
CEL-105LI
Part Number:
CEL-105LI
Description:
LITHIUM ION 900MA FOR USE WITH NOKIA 3360 CELL PHONE
Manufacturer:
DANTONA INDUSTRIES
CEL-135LI
Part Number:
CEL-135LI
Description:
CELL PHONE BATTERY FOR MOTOROLA V3 CELLULAR PHONE
Manufacturer:
DANTONA INDUSTRIES
CEL-6015
Part Number:
CEL-6015
Description:
NOKIA CELL PHONE BATTERY
Manufacturer:
DANTONA INDUSTRIES
CEL-8100-ORG
Part Number:
CEL-8100-ORG
Description:
CELL PHONE BATTERY
Manufacturer:
DANTONA INDUSTRIES
CEL-A990
Part Number:
CEL-A990
Description:
Samsung SCH-A990 Li-Ion Replacement Cell Phone Battery
Manufacturer:
SAMSUNG
CEL-I550
Part Number:
CEL-I550
Description:
4.8V, 1300MAH, NIMH, FOR MOTOROLA & NEXTEL 2-WAY RADIO
Manufacturer:
DANTONA INDUSTRIES
PS2603L
Part Number:
PS2603L
Description:
Transistor Output Optocouplers DISC BY CEL 6/00 SO-6 PHOTOCOUPLER
Manufacturer:
CEL
Datasheet:
PS2603.pdf (4 pages)
PS2601
Part Number:
PS2601
Description:
Transistor Output Optocouplers DISC BY CEL 8/00 DIP-6 PHOTO COUPLER
Manufacturer:
CEL
Datasheet:
PS2601.pdf (4 pages)
PS2607
Part Number:
PS2607
Description:
Transistor Output Optocouplers DISC BY CEL 11/00 DIP-6 PHOTO COUPLER
Manufacturer:
CEL
Datasheet:
PS2608.pdf (4 pages)
PS2602
Part Number:
PS2602
Description:
Transistor Output Optocouplers DISC BY CEL 6/00 DIP-6 PHOTO COUPLER
Manufacturer:
CEL
Datasheet:
PS2601.pdf (4 pages)
PS2626
Part Number:
PS2626
Description:
Transistor Output Optocouplers DISC BY CEL 5/00 DIP-6 PHOTO COUPLER
Manufacturer:
CEL
Datasheet:
PS2626.pdf (4 pages)

NE68019-A Summary of contents

Page 1

... GHz 2 GHz • HIGH ASSOCIATED GAIN: 12 GHz 8 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- signed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications GHz ...

Page 2

... NE68019 2SC5008 19 TYP MAX 10 1.7 1.9 13.5 9.6 18.5 11.8 7.3 15 9.2 4.4 160 1.0 1.0 0.3 0.7 100 ...

Page 3

... RATINGS 1 °C 150 2 °C -65 to +150 (T = 25° GHz GHz GHz 50 70 100 (mA POWER DERATING CURVES 400 300 NE68035 NE68033 NE68039 200 NE68019 100 0 50 100 150 0 Ambient Temperature, T (°C) A NE68033 INSERTION GAIN vs. COLLECTOR CURRENT GHz 10 NE68033 100 Collector Current, I (mA) ...

Page 4

TYPICAL PERFORMANCE CURVES FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 300 200 100 Collector Current NE68035 NOISE FIGURE vs. COLLECTOR CURRENT GHz ...

Page 5

... 500 1.5 21.20 .47 800 1.6 17.50 .38 1000 1.6 15.63 .44 2000 2.1 10.20 .32 3000 2.4 7.49 .19 NE68019 TYPICAL NOISE PARAMETERS FREQ OPT A OPT Γ (MHz) (dB) (dB) MAG 5mA CE C 500 1.36 19.2 0.52 800 1.47 15.7 0.48 1000 1.55 14.0 ...

Page 6

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68018 V = 2.5 ...

Page 7

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz -. GHz -.4 -.6 -1.5 -.8 -1 NE68019 FREQUENCY S 11 (MHz) MAG ANG 100 .971 -9.9 400 .905 -34.9 800 .774 -65.1 1000 .706 -78.0 1500 .564 -106.1 2000 .453 -130.7 2500 .364 -156 ...

Page 8

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68030 V ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68033 ...

Page 10

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz -. -.4 5 GHz -.6 -1.5 -.8 -1 NE68035 ...

Page 11

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz 6 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68039 V = ...

Page 12

NE68018 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 13

... NE68019 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR Infinity ITF IKR Infinity PTF ISC 0.6 XTB RB 17.9 XTI RBM 1.02 ...

Page 14

NE68030 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 15

... RBM 1.02 KF IRB 4.01e 10.5 CJE 0.358e-12 VJE 0.71 MJE 0.5 CJC 0.162e-12 VJC 0.79 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG BEPKG L EX Emitter UNITS (1) Parameter ...

Page 16

NE68035 NONLINEAR MODEL SCHEMATIC RB_PKG BASE 0.1 ohms CBEX_PKG 0.1pF BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. ...

Page 17

OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 160 μm) 0.35 0.01 0.13 BASE EMITTER 30 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 ...

Page 18

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 ...

Page 19

... ORDERING INFORMATION PART NUMBER QUANTITY NE68800 100 NE68018-T1-A 3000 1 NE68019-T1-A 3000 1 NE68030-T1-A 3000 1 NE68033-T1B-A 3000 1 NE68035 1 NE68039-T1-A 3000 1 NE68039R-T1 3000 Note: 1. Lead material: Cu Lead plating: SnBi – 2.5%Bi Typ. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...

Page 20

...

Related keywords