BF 776 E6327 Infineon Technologies, BF 776 E6327 Datasheet

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BF 776 E6327

Manufacturer Part Number
BF 776 E6327
Description
TRANS RF NPN 1.8GHZ 4.0V SOT343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF 776 E6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
46GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
24dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 30mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Performance NPN Bipolar RF Transistor
• High performance low noise amplifier
• Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz
• For a wide range of non automotive applications
• Easy to use standard package with visible leads
• Pb-free (RoHS compliant) package
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BF776
Maximum Ratings at T
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T S is measured on the emitter lead at the soldering point to the pcb
For calculation of R
A
A
S
such as WLAN, WiMax, UWB, Bluetooth, GPS,
SDARs, DAB, LNB, UMTS/LTE and ISM bands
= 25 °C
≤ 90°C
= -55 °C
thJA
Marking
R3s
please refer to Application Note Thermal Resistance
1)
A
2)
= 25 °C, unless otherwise specified
1=B
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
J
A
Stg
thJS
4=E
-
4
-55 ... 150
-55 ... 150
-
3
≤ 300
Value
Value
200
150
4.0
3.5
1.2
13
13
50
3
Package
SOT343
2010-04-06
1
BF776
2
Unit
V
mA
mW
°C
Unit
K/W

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BF 776 E6327 Summary of contents

Page 1

High Performance NPN Bipolar RF Transistor • High performance low noise amplifier • Low minimum noise figure of typ. 0 1.8 GHz • For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

SPICE Parameter For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. The simulation data have been ...

Page 5

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 6

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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