MCR16N
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
December, 2005 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(180 Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for half−wave ac control applications, such as
Ease of Design
Blocking Voltage to 800 Volts
On−State Current Rating of 16 Amperes RMS
High Surge Current Capability − 160 Amperes
Rugged Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of I
High Immunity to dv/dt − 100 V/msec Minimum at 125 C
Pb−Free Package is Available*
Semiconductor Components Industries, LLC, 2005
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
J
DRM
= −40 to 125 C, Sine Wave,
and V
C
RRM
1.0 ms, T
= 80 C)
1.0 ms, T
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
C
J
= 80 C)
= 80 C)
= 25 C unless otherwise noted)
C
Preferred Device
= 80 C)
J
MCR16N
= 125 C)
GT
Symbol
I
P
V
, V
V
T(RMS)
I
P
I
T
G(AV)
DRM,
TSM
RRM
I
GM
T
GM
2
stg
J
GT
t
, and I
−40 to +125
−40 to +150
Value
H
800
160
106
5.0
0.5
2.0
16
Specified for
1
A
Unit
2
W
W
V
A
A
A
sec
C
C
MCR16N
MCR16NG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
ORDERING INFORMATION
16 AMPERES RMS
A
Y
WW
G
AKA = Diode Polarity
A
http://onsemi.com
PIN ASSIGNMENT
CASE 221A−09
800 VOLTS
TO−220AB
TO−220AB
(Pb−Free)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
TO−220AB
Package
STYLE 3
SCRs
Publication Order Number:
Cathode
Anode
Anode
Gate
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MCR16NG
AY WW
K
Shipping
AKA
MCR16/D