MCR69-2G ON Semiconductor, MCR69-2G Datasheet - Page 3

• Manufacturer Part Number: MCR69-2G
• Description: THYRISTOR SCR 25A 50V TO220AB
• Manufacturer: ON Semiconductor

Specifications of MCR69-2G

• Scr Type: Standard Recovery
• Voltage - Off State: 50V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 16A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 50mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 300A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 25A
• Current Squared Time Rating: 375
• Current, Forward: 25 A
• Current, Surge: 300 A
• Package Type: TO-220AB
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 1.5 °C/W
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Voltage, Forward: 6 V
• Voltage, Reverse: 50 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR69-2GOS

1000
125
120
115
110
105
100
Symbol
V
I
V
I
V
I
300
200
100
95
90
85
80
75
DRM
RRM
H
50
20
DRM
RRM
TM
0.5
Figure 1. Peak Capacitor Discharge Current
I
TM
t
w
1.0
I
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
= 5 time constants
T(AV)
4.0
Figure 3. Current Derating
, AVERAGE ON-STATE CURRENT (AMPS)
t
w
t
w
, PULSE CURRENT DURATION (ms)
2.0
8.0
5.0
12
Half Wave
Voltage Current Characteristic of SCR
dc
10
16
MCR69−2, MCR69−3
20
http://onsemi.com
I
Reverse Avalanche Region
Anode −
RRM
20
50
Reverse Blocking Region
3
at V
8.0
1.0
0.8
0.6
0.4
0.2
32
24
16
RRM
0
0
(off state)
0
Figure 2. Peak Capacitor Discharge Current
on state
Figure 4. Maximum Power Dissipation
I
T(AV)
4.0
25
+ Current
, AVERAGE ON-STATE CURRENT (AMPS)
T
C
, CASE TEMPERATURE ( C)
Forward Blocking Region
I
H
8.0
50
Derating
V
TM
(off state)
I
DRM
12
75
Anode +
at V
DRM
T
+ Voltage
100
J
16
= 125 C
Half Wave
dc
125
20