16TTS12S Vishay, 16TTS12S Datasheet - Page 2

• Manufacturer Part Number: 16TTS12S
• Description: SCR PHASE CONT 1200V 16A D2PAK
• Manufacturer: Vishay

Specifications of 16TTS12S

• Scr Type: Standard Recovery
• Voltage - Off State: 1200V
• Voltage - Gate Trigger (vgt) (max): 2V
• Voltage - On State (vtm) (max): 1.4V
• Current - On State (it (av)) (max): 10A
• Current - On State (it (rms)) (max): 16A
• Current - Gate Trigger (igt) (max): 60mA
• Current - Hold (ih) (max): 100mA
• Current - Off State (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A @ 50Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current - On State (it (rms) (max): 16A
• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 60mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *16TTS12S; VS-16TTS12S; VS-16TTS12S; VS16TTS12S; VS16TTS12S

Document Number: 93698
16TTS.. S
Bulletin I2105 rev. D 12/98
Voltage Ratings
Absolute Maximum Ratings
I
I
I
I
I
V
r
V
I
I
I
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
T(AV)
RMS
TSM
2
2
RM
H
L
t
t
TM
T(TO)
t
/I
DM
Max. Latching Current
Parameters
Max. Average On-state Current
Max. RMS On-state Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
Max. I
Max. On-state Voltage Drop
On-state slope resistance
Threshold Voltage
Max.Reverse and Direct
Leakage Current
Holding Current
Part Number
2
2
t for fusing
16TTS08S
16TTS12S
16TTS16S
t for fusing
IR
Series
Typ.
100
peak reverse voltage
--
16TTS..S
2000
24.0
170
200
144
200
200
500
150
V
1.4
1.1
0.5
10
16
10
RRM
Max.
100
150
, maximum
1200
1600
800
V
Units
A
V/µs
A/µs
m
mA
A
mA
mA
2
V
V
A
2
s
s
@ T
10ms Sine pulse, rated V
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
@ 10A, T
T
T
T
Anode Supply = 6V, Resistive load
Anode Supply = 6V, Resistive load, Initial I
16TTS08S, 16TTS12S
16TTS16S
J
J
J
= 125°C
= 25 °C
= 125 °C
C
= 98° C, 180° conduction half sine wave
J
= 25°C
peak direct voltage
V
DRM
Conditions
, maximum
1200
1600
800
V
V
R
RRM
RRM
= rated V
applied
applied
www.vishay.com
RRM
/ V
DRM
I
RRM
T
125°C
=1A
mA
10
/
I
DRM
2